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Arsenic Doped Monocrystalline Silicon Ingot
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Product: Views:192Arsenic Doped Monocrystalline Silicon Ingot 
Unit price: Negotiable
MOQ:
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Delivery date: Since the payment date Days delivery
Valid until: Long-term effective
Last updated: 2017-10-17 11:27
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Details

Type

Dopant

Diameter
(mm)

Resistivity Range
  (ohm.cm)

N

Arsenic

100/125/150/200/300/400

0.0020~0.01


Growing a silicon ingot can take anywhere from a week to an entire month depending on many factors including size, quality and specifications. More than 75% of all single crystal silicon wafers grow via the Czochralski (CZ) method which uses chunks of virgin polycrystalline silicon. These chunks are melted down and placed in a quartz crucible along with small quantities of elements called dopants, the most common of which are boron, phosphorus, arsenic and antimony. The added dopants give the desired electrical properties for the grown ingot and depending on which dopant is used, the ingot becomes a P or N type ingot (boron: P type; phosphorus, antimony, arsenic: N type).

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